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An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED

dc.contributor.authorZarate Galvez, Sarai
dc.contributor.otherGarcia Barrientos, Abel
dc.contributor.otherAmbrosio Lazaro, Roberto
dc.contributor.otherGarcia Ramirez, Mario
dc.contributor.otherStevens Navarro, Enrique
dc.contributor.otherPlaza Castillo, Jairo
dc.contributor.otherHoyo Montaño, Jose
dc.contributor.otherPerez Cortes, Obed
dc.coverage.spatialColombia
dc.date.accessioned2022-11-15T19:12:12Z
dc.date.available2022-11-15T19:12:12Z
dc.date.issued2022-08-08
dc.date.submitted2022-07-02
dc.identifier.citationZarate-Galvez, S.; Garcia-Barrientos, A.; Ambrosio-Lazaro, R.; Garcia-Ramirez, M.; Stevens-Navarro, E.; Plaza-Castillo, J.; Hoyo-Montaño, J.; Perez-Cortes, O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals 2022, 12, 1108. https:// doi.org/10.3390/cryst12081108spa
dc.identifier.urihttps://hdl.handle.net/20.500.12834/771
dc.description.abstractSimulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in the literature. The power law mobility is used for the current calculation in the quantum drift-diffusion model. The results indicate the lower hole and electron leakage currents correspond to the lowest mobility values for the InGaN alloy, the greatest amount of recombination occurs in the extreme wells within the active layer of the LED and the stable emission is at 3.6 V with peak wavelength ˆl LED = 456.7 nm and full width at half maximum FWHM 11.1 nm for the three mobilities. Although experimental and theoretical mobility values reach higher carrier density and recombination, the photon emission is broader and unstable. Additionally, the doping-concentration mobility results in lower wavelength shifts and narrows FWHM, making it more stable. The highest quantum efficiency achieved by dopingconcentration mobility is only in the breakdown voltage (hdop�����max = 60.43%), which is the IQE value comparable to similar LEDs and is more useful for these kinds of semiconductor devices.spa
dc.format.mimetypeapplication/pdfspa
dc.language.isoengspa
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/*
dc.sourceCrystalsspa
dc.titleAn Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LEDspa
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datacite.rightshttp://purl.org/coar/access_right/c_abf2spa
oaire.resourcetypehttp://purl.org/coar/resource_type/c_2df8fbb1spa
oaire.versionhttp://purl.org/coar/version/c_970fb48d4fbd8a85spa
dc.audiencePúblico generalspa
dc.identifier.doi10.3390/cryst12081108
dc.identifier.instnameUniversidad del Atlánticospa
dc.identifier.reponameRepositorio Universidad del Atlánticospa
dc.rights.ccAttribution-NonCommercial 4.0 International*
dc.subject.keywordsInGaN/GaNspa
dc.subject.keywordsblue light emitting diodesspa
dc.subject.keywordsquantumefficiencyspa
dc.subject.keywordsquantumdrift-diffusionmodelspa
dc.type.driverinfo:eu-repo/semantics/articlespa
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersionspa
dc.type.spaArtículospa
dc.publisher.placeBarranquillaspa
dc.rights.accessRightsinfo:eu-repo/semantics/openAccessspa
dc.publisher.disciplineFísicaspa
dc.publisher.sedeSede Nortespa


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